1MBH15D-060 molded igbt 600v / 15a molded package features small molded package low power loss soft switching with low switching surge and noise high reliability, high ruggedness (rbsoa, scsoa etc.) comprehensive line-up applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c) equivalent circuit schematic item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector dc tc=25c i c25 current tc=1 10c i c110 1ms tc=25c icp max. power dissipation (igbt) p c max. power dissipation (fwd) p c operating temperature t j storage temperature t stg screw torque - rating 600 20 37 15 132 140 75 +150 -40 to +150 70 unit v v a a a w w c c ncm c:collector e:emitter g:gate igbt + electrical characteristics (at tc=25c unless otherwise specified) item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time switching time turn-on time turn-off time fwd forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t off t f t on t r t off t f v f t rr ? ? 1.0 ??20 5.5 ? 8.5 ? ? 3.0 ? 1000 ? ? 200 ? ?40? ? ? 1.2 ? ? 0.6 ? ? 1.0 ? ? 0.35 ? 0.16 ? ? 0.11 ? ? 0.30 ? ? ? 0.35 ? ? 3.0 ? ? 0.3 v ge =0v, v ce =600v v ce =0v, v ge =20v v ce =20v, i c =15ma v ge =15v, i c =15a v ge =0v v ce =10v f=1mhz v cc =300v, i c =15a v ge =15v r g =160 ohm (half bridge) v cc =300v, i c =15a v ge =+15v r g =16 ohm (half bridge) i f =15a i f =15a, v ge =-10v, v r =200v, di/dt=100a/s ma a v v pf s s v s symbol characteristics conditions unit min. typ. max. thermal resistance characteristics thermal resistance ? ? 0.89 ? ? 1.66 igbt fwd c/w c/w item symbol characteristics conditions unit min. typ. max. rth(j-c) rth(j-c) outline drawings, mm fwd to-3pl
characteristics 1MBH15D-060 molded igbt collector current vs. collector-emitter voltage tj=25c collector-emitter voltage : v ce (v) collector current : i c (a) collector current : i c (a) collector-emitter voltage : v ce (v) collector current vs. collector-emitter voltage tj=125c collector-emitter voltage vs. gate-emitter voltage tj=25c collector-emitter voltage vs. gate-emitter voltage tj=125c collector-emitter voltage : v ce (v) collector-emitter voltage : v ce (v) gate-emitter voltage : v ge (v) gate-emitter voltage : v ge (v) switching time vs. collector current v cc =300v, r g =16 ? , v ge =15v, tj=25c switching time vs. collector current v cc =300v, r g =16 ? , v ge =15v, tj=125c switching time : tf,toff, tr, ton, trr2 (nsec) switching time : tf,toff, tr, ton, trr2 (nsec) collector current : i c (a) collector current : i c (a)
igbt module characteristics 1MBH15D-060 gate resistance : r g ( ? ) switching time vs. r g v cc =300v, i c =15a, v ge = 15v, tj=25c switching time : tf,toff, tr, ton, trr2 (nsec) gate resistance : r g ( ? ) switching time : tf,toff, tr, ton, trr2 (nsec) switching time vs. r g v cc =300v, i c =15a, v ge = 15v, tj=125c dynamic input characteristics tj=25c collector-emitter voltage : v ce (v) gate charge : qg (nc) capacitance vs. collector-emitter voltage tj=25c capacitance : cies, coes, cres (nf) collector-emitter voltage : v ce (v) collector current : i c (a) collector-emitter voltage : v ce (v) gate voltage : v ge (v) short circuit current : i sc (a) gate-emitter voltage : v ge (v) reverse biased safe operating area +v ge =15v, -v ge 15v, tj 125c, r g 16 ? = < = < = > typical short circuit capability v cc =400v, r g= 16 ? , tj=125c, short circuit time : t sc (s)
igbt module characteristics 1MBH15D-060 reverse recovery time vs. forward current v r =200v, -di/dt=100a/sec reverse recovery time : trr [nsec] forward current : i f (a) forward current : i f (a) reverse recovery current : irr [a] forward voltage vs. forward current forward current : i f [a] forward voltage : v f (v) reverse recovery chracteristics vs. -di/dt i f =15a, tj=125c reverse recovery time : trr [nsec] -di/dt [a/ sec] reverse recovery current : irr [a] transient thermal resistance reverse recovery current vs. forward current v r =200v, -di/dt=100a/sec thermal resistance : rth(j-c) [c/w] pulse width : p w (sec)
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